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EPC announces the availability of their industry-leading enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration. EPC’s eGaN FETs and ICsare traditionally sold as singulated chip-scale devices with solder bars or solder bumps.
Chip-scale packaging is a more efficient form of packaging that reduces the resistance, inductance, size, thermal impedance, and cost of power transistors. These attributes of eGaN devices enable unmatched in-circuit performance at competitive prices.
Wafer-level offerings of these devices allows for easier integration in customer power system sub-assemblies, further reducing device interconnect inductances and the interstitial space needed on the printed circuit board (PCB). This increases both efficiency and power density while reducing assembly costs.
“We have listened to our partners and are pleased to offer our industry-leading GaN products in wafer form that can accommodate a variety of assembly techniques and applications,” commented Alex Lidow, CEO and co-founder of EPC.
EPC is offering eGaN power devices in wafer form either with or without solder bumps. Extra services such as wafer thinning, metallization of the wafer backside, and application of backside coating tape are also available.
EPC is the leader in enhancement mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.